Zero-resistance states induced by bichromatic microwaves
نویسندگان
چکیده
منابع مشابه
Radiation-induced zero-resistance states with resolved Landau levels
The microwave-photoexcited high mobility GaAs/AlGaAs two-dimensional electron system exhibits an oscillatory-magnetoresistance with vanishing resistance in the vicinity of magnetic fields B = [4/(4j + 1)]Bf , where Bf = 2πfm ∗/e, m∗ is an the effective mass, e is the charge, f is the microwave frequency, and j =1,2,3... Here, we report transport with well-resolved Landau levels, and some transm...
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High-mobility two-dimensional electron systems in a perpendicular magnetic field exhibit zero-resistance states ZRSs when driven with microwave radiation. We study the nonequilibrium phase transition into the ZRS using phenomenological equations of motion to describe the electron current and density fluctuations in the presence of a magnetic field. We focus on two models to describe the transit...
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Magnetotransport measurements on a high-mobility electron bilayer system formed in a wide GaAs quantum well reveal vanishing dissipative resistance under continuous microwave irradiation. Profound zero-resistance states (ZRS) appear even in the presence of additional intersubband scattering of electrons. We study the dependence of photoresistance on frequency, microwave power, and temperature. ...
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ژورنال
عنوان ژورنال: physica status solidi (a)
سال: 2007
ISSN: 1862-6300,1862-6319
DOI: 10.1002/pssa.200673209